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MITSUBISHI MEMORY CARD
STATIC RAM CARDS
8/16-bit Data Bus Static RAM Card
MF38M1-L6DAGXX
Connector Type
Two- piece 68-pin
DESCRIPTION Mitsubishi's Static RAM cards provide large memory capacities on a device approximately the size of a credit card ( 8 5 . 6 m m x 54mmx 5 . 0 m m ) . The cards use an 8/16 bit data bus. Availabale in 8MB capacities, Mitsubishi's SRAM cards conform to the JEIDA/PCMCIA standard. Mitsubishi acheived high density memory, while maintaining credit size by using a thin small outline packaging technology(TSOP). The TSOP surpasses conventional memory card chip-on-board packaging technology where larger, surface-mount devices result in a tradeoff between card size and optimum memory density. This allows up to 16 memory Ics (plus interface circuitry) to be mounted in a card that in only 5.0mm thick. FEATURES nU s e s T S O P ( T h i n S m a l l O u t l i n e P a c k a g e ) t o achieve very high memory density coupled with high reliability, without enlarging card size. nOne to 16 memory ICs can be mounted in a card that is only 5.0mm thick. nE l e c t r o s t a t i c d i s c h a r g e p r o t e c t i o n t o 1 5 k V nB u f f e r e d i n t e r f a c e nW r i t e p r o t e c t s w i t c h nA t t r i b u t e m e m o r y n68pin JEIDA/PCMCIA APPLICATIONS nO f f i c e a u t o m a t i o n nD a t a C o m m u n i c a t i o n nC o m p u t e r s
nI n d u s t r i a l nT e l e c o m m u n i c a t i o n s nC o n s u m e r
PRODUCT LIST
Item Type name MF38M1-L6DAGXX Memory capacity 8MB Data Bus width(bits) 8/16 Attribute memory YES Auxialiary battery NO Memory organization 4M bit SRAMx 16 Outline drawing 68P-010 Main battery holder Screw type
MITSUBISHI ELECTRIC 1/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
PIN ASSIGNMENT Two-Piece Type (68-pin)
Pin Symbol No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 GND D3 D4 D5 D6 D7 CE1# A10 OE# A11 A9 A8 A13 A14 WE# NC VC C NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 D0 D1 D2 WP GND Write protect Ground Data I/O Address input Write enable No connection Power supply voltage No connection Address input Card enable 1 Address input Output enable Data I/O Ground Pin No. 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 GND CD1# D11 D12 D13 D14 D15 CE2# NC NC NC A17 A18 A19 A20 A21 VC C NC A22 NC NC NC NC NC NC NC
REG# Address input
Function
Symbol Ground Card detect 1
Function
Data I/O
Card enable 2 No connection
Power supply voltage No connection Address input
No connection
REG function Battery voltage detect 2 Battery voltage detect 1 Data I/O Card detect 2 Ground
BVD2 BVD1 D8 D9 D10 CD2# GND
WRITE PROTECT MODE (WP) When the write protect switch is switched on, this card goes into a write protect mode that can read but not write data. In this mode, WP pin becomes "H" level. At the shipment the write protect switch is switched off (Normal mode : The card can be written ; WP pin indicates "L" level).
MITSUBISHI ELECTRIC 2/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
BLOCK DIAGRAM (8MB)
A22 A21 A20 A0 A19 A18 A17 A16 A15 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1
ADDRESSDECODER
17
CS# ADDRESSBUS BUFFERS COMMON MEMORY
8
19
13
4Mbit SRAMx16 OE# WE# CS# ATTRIBUTE MEMORY OE# 64Kbit WE# E2PROMx1
8
DATA-BUS BUFFERS
D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0
8
CE1# CE2# WE# OE# REG# WP# WRITE PROTECT
OFF ON
MODE CONTROL LOGIC
2
TO INTERNAL POWER SUPPLY VOLTAGE DETECTOR & POWER CONTROLLER GND BR2325 VCC BVD2 BVD1
CD1# CD2#
FUNCTION TABLE
Mode Standby Read A (16bit) common Write A (16bit) common Read B (8bit) common Write B (8bit) common Read C (8bit) common Write C (8bit) common Output disable Read A (16bit) attribute Read B (8bit) attribute Read C (8bit) attribute Write A (16bit) attribute Write B (8bit) attribute Write C (8bit) attribute
REG# CE1# CE2# OE# WE# A0
I/O (D15~D8) High-impedance Odd Byte Data out Odd Byte Data in High-impedance High-impedance High-impedance High-impedance Odd Byte Data out Odd Byte Data in High-impedance Data out (unknown) High-impedance High-impedance Data out (unknown) don't care don't care don't care don't care
I/O (D7~D0) High-impedance Even Byte Data out Even Byte Data in Even Byte Data out Odd Byte Data out Even Byte Data in Odd Byte Data in High-impedance High-impedance High-impedance Even Byte Data out Even Byte Data out Data out (unknown) High-impedance Even Byte Data in Even Byte Data in don't care don't care
ICC standby Active Active Active Active Active Active Active Active Active Active Active Active Active Active Active Active Active
X H H H H H H H H X L L L L L L L L
H L L L L L L H H X L L L H L L L H
H L L H H H H L L X L H H L L H H L
X L H L L H H L H H L L L L H H H H
X H L H H L L H L H H H H H L L L L
X X X L H L H X X X X L H X X L H X
Note 1 : H=VIH, L=VIL, X=VIH or VI L
MITSUBISHI ELECTRIC 3/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCC Supply voltage Vi Input voltage Vo Output voltage Topr1 Operating temperature 1 Topr2 Operating temperature 2 Tstg Storage temperature
Conditions With respect to GND Read, Write, Operation Data retention
Ratings -0.3~6.0 -0.3~VCC+0.3 0~VCC 0~70 0~70 -30~80
Unit V V V C C C
RECOMMENDED OPERATING CONDITIONS(Ta=0~55C, unless otherwise noted) Symbol VCC GND VIH VI L Parameter VCC supply voltage System ground High input voltage Low input voltage Limits Typ. 5.0 0
Min. 4.75 2.4 0
Max. 5.25 VCC 0.8
Unit
V V V V
ELECTRICAL CHARACTERISTICS ( T a = 0 ~ 5 5 C , V C C = 5 V 5 % , u n l e s s o t h e r w i s e n o t e d ) Symbol
VO H VO L IIH IIL IOZH IOZL ICC 1 * 1 ICC 1 * 2 ICC 2 * 1 ICC 2 * 2 VBDET1 VBDET2
Parameter
High output voltage Low output voltage High input current
Test conditions
IOH=-1.0mA, Other outputs IOL=2mA VI = V C C V
Min. 2.4
Limits Typ. Max. 0.4 10 -70 -10 10 -10 280 270 10 1
Unit
V V A A A A mA mA mA mA V V
Low input current
High output current in off state Low output current in off state Active supply current 1 Active supply current 2 Standby supply current 1 Standby supply current 2 Battery detect reference voltage 1 Battery detect reference voltage 2
VI =0V
CE1#, CE2#, WE#, OE#, REG# Other inputs
-10
CE1#=CE2#=VIH or OE#=VIH WE#=VIH, VO = V C C CE1#=CE2#=VIH or OE#=VIH WE#=VIH, VO = 0 V CE1#=CE2#=VIL, other inputs VIH or VI L , O u t p u t s = o p e n
CE1#=CE2# 0.2V, other inputs 0.2V or VCC-0.2V, Outputs=open
CE1#=CE2#=VIH other inputs=VIH or VIL C E 1 # = C E 2 # VC C - 0 . 2 V o t h e r i n p u t s 0 . 2 V o r VC C - 0 . 2 V V c c = 5 V , T a = 2 5 C V c c = 5 V , T a = 2 5 C
2.27 2.55
2.37 2.65
2.47 2.75
Note 2 : Currents flowing into the IC are taken as positive (unsigned). 3 : Typical values are measured at VCC=5V, Ta=25C. Pin asserted when battery voltage drops below specified level.
MITSUBISHI ELECTRIC 4/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
CAPACITANCE
Symbol
CI
Parameter
Input capacitance
Test conditions
Limits
Min. Typ. Max.
Unit
pF pF
VI =GND, VI = 2 5 m V r m s f=1 MHZ, T a = 2 5 C CO O u t p u t c a p a c i t a n c e VO=GND, VO=25mVrms f=1 MHZ, Ta=25C Note 4 : These parameters are not 100% tested. SWITCHING CHARACTERISTICS Read Cycle (Ta=0~55C, VCC=5V5%, unless otherwise noted) Limits Typ.
30 20
Symbol
tCR t a (A) t a(CE) t a(OE) tdis(CE) tdis(OE) ten(CE) ten(OE) t V (A) Read cycle time Address access time
Parameter
Min. 200
Max. 200 200 100 90 90
Unit
ns ns ns ns ns ns ns ns ns
Card enable access time Output enable accese time Output disable time (from CE#) Output disable time (from OE#) Output enable time (from CE#) Output enable time (from OE#) Data valid time (after address change) 5 5 0
TIMING REQUIREMENTS Write Cycle (Ta=0~55C, VCC=5V5%, unless otherwise noted) Limits Typ.
Symbol
tCW tw(WE) tsu(A) tsu(A-WEH) tsu(CE-WEH) tsu(D-WEH) th(D) trec(WE) tdis(WE) tdis(OE) ten(WE) ten(OE) tsu(OE-WE) th(OE-WE) Write cycle time Write pulse width Address set up time
Parameter
Min. 200 120 20 140 140 60 30 30
Max.
Unit
ns ns ns ns ns ns ns ns
Address set up time with respect to WE# high Card enable set up time with respect to WE# high Data set up time with respect to WE# high Data hold time Write recovery time Output disable time (from WE#) Output disable time (from OE#) Output enable time (from WE#) Output enable time (from OE#) OE# set up time with respect to WE# low OE# hold time with respect to WE# high
90 90 5 5 10 10
ns ns ns ns ns ns
MITSUBISHI ELECTRIC 5/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
TIMING DIAGRAM Read Cycle
tCR
An
VIH VIL VIH
ta(A) ta(CE) tV(A)
CE# VIL
ten(CE) tdis(CE) ta(OE)
VIH OE# VIL
ten(OE)
tdis(OE)
VOH Dm (DOUT) VOL
WE#="H" level REG#="H" level
Hi-Z
OUTPUT VALID
Note 5 : Write Cycle (WE# control) tCW
Indicates the don't care input
VIH An VIL VIH CE# VIL VIH OE# VIL VIH WE# VIL tSU(OE-WE) Dm (DIN) VIH
Hi-Z tSU(D-WEH) th(D) th(OE-WE) tSU(A) tW(WE) trec(WE) tSU(A-WEH) tSU(CE-WEH)
VIL
tdis(OE)
DATA INPUT STABLE
tdis(WE) Hi-Z ten(OE) ten(WE)
VOH Dm (DOUT) VOL
REG#="H" level
MITSUBISHI ELECTRIC 6/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
Write Cycle (CE# control) tCW
VIH An VIL
tSU(A) tSU(CE-WEH) trec(WE)
VIH CE# VIL VIH WE# VIL
tSU(D-WEH) th(D)
Dm (DIN)
VIH VIL
Hi-Z
DATA INPUT STABLE
OE#="H" level REG#="H" level
MITSUBISHI ELECTRIC 7/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
SWITCHING CHARACTERISTICS (Attribute) Read Cycle (Ta=0~55C, VCC=5V5%, unless otherwise noted) Limits
Symbol
tCRR ta(A)R ta(CE)R ta(OE)R tdis(CE)R tdis(OE)R ten(CE)R ten(OE)R tV(A)R
Parameter
Read cycle time Address access time Card enable access time Output enable access time Output disable time (from CE#) Output disable time (from OE#) Output enable time (from CE#) Output enable time (from OE#) Data valid time after address change
Min.
Typ.
Max.
Unit
ns ns ns ns ns ns ns ns ns
300 300 300 150 100 100 5 5 0
TIMING REQUIREMENTS (Attribute) W r i t t e C y c l e ( T a = 0 5 5 C , V C C =5V 5 % , u n l e s s o t h e r w i s e n o t e d ) Limits Typ.
Symbol
tASR t AHR tCSR t CHR tDSR tDHR tODSR tOEHR tWPR tDLR tBLR tBLCR tWCR ten(OE)R tDFR
Paramete
Address setup time Address hold time CE# setup time CE# hold time Data setup time Data hold time OE# setup time OE# hold time Write pulse width Data latch time Byte load time Byte load cycle time Write cycle time Output enable time from OE# Output disable time from OE#
Min. 30 30 40 30 120 40 30 40 170 120 100 0.3 10 5 0
Max.
Unit
ns ns ns ns ns ns ns ns ns ns s s ms ns ns
30
100
MITSUBISHI ELECTRIC 8/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
TIMING DIAGRAM (Attribute) Read Cycle tCRR
An
VIH
VIL VIH CE# VIL
ta(A)R ta(CE)R
tV(A)R
ten(CE)R
tdis(CE)R ta(OE)R
VIH OE# VIL
ten(OE)R
tdis(OE)R
VOH Dm (DOUT) VOL
WE#="H" level REG#="L" level
Hi-Z
OUTPUT VALID
BYTE WRITE TIMING CHART tAHR
VIH An VIL
tCSR tCHR
VIH CE# VIL VIH WE# VIL
tOESR tASR tWPR
tWCR tBLR tOER
VIH OE# VIL VIH VIL
ten(OE)R Hi-Z tDFR tDSR tDHR
DIN
DOUT
VOH VOL
REG#="L" level
Hi-Z
MITSUBISHI ELECTRIC 9/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
PAGE MODE WRITE TIMING CHART
An=(n>6)
An (A0~A5)
0h
2h
4h
3Ch
3Eh
CE# tCSR tWPR tDLR tCHR
WE# tASR tOESR OE# tDSR tDHR Hi-Z tDFR tAHR tBLCR
tBLR tOEHR
tWCR
DIN
DOUT
Hi-Z
REG#="L" level
Note 6 : Test Conditions Input pulse levels : VIL=0.4V, VIH= 2 . 8 V Input pulse rise, fall time : tr=tf=10ns Reference voltage Input : VIL=0.8V, VIH= 2 . 4 V Output : VOL=0.8V, VOH=2.0V (ten and tdis are measured when output voltage is 500mV from steady state. ) Load : 100pF+1 TTL gate 5pF+1 TTL gate (at ten and tdis measuring) 7 : Writing is executed in overlap of CE# and WE# are "L" level. (only for Common Memory) 8 : Don't apply inverted phase signal externally when Dm pin is in output mode. 9 : CE# is indicated as follows: Read A/Write A : CE#=CE1#=CE2# Read B/Write B : CE#=CE1#, CE2#="H" level Read C/Write C : CE#=CE2#, CE1#="H" level
MITSUBISHI ELECTRIC 10/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
ELECTRICAL CHARACTERISTICS BATTERY BACKUP(Ta=0~55C, unless otherwise noted)
Limits Typ.
Symbol VBATT VI(CE)
Parameter Back-up enable battery voltage Card enable voltage
ICC(BUP) ICC(BUP)
Battery back-up supply current Battery back-up supply current
Test Conditions All pins open 2 . 4 V VC C 5 . 2 5 V 0 V VC C < 2 . 4 V All pins open, VBATT= 3 V , Ta=25C All pins open, VBATT= 3 V
Min. 2.6 2.4 VC C - 0 . 1
Max.
Unit V V
VC C
VCC+0.1
17 400
A A
TIMING REQUIREMENTS(Ta=0~55C, unless otherwise noted) Limits
Symbol Parameter Min. Typ. Max. Unit
tpr tpf tsu(VCC) trec(VCC)
Power supply rise time Power supply fall time Setup time at power on Recovery time at power off
0.1 3 20 1000
300 300
ms ms ms ns
CARD INSERTION/REMOVAL TIMING DIAGRAM
VC C M I N m e a n s M i n i m u m O p e r a t i n g V o l t a g e = 4 . 5 0 V .
VCC VCC MIN trec(VCC) CE1#, CE2#
tpf 90%
VIH VIH
tpr 90% 10% 10% VCC MIN tsu(VCC)
VCC
CE1, CE2
Note 10: When the card is holding valuable data, the battery must not be removed unless VCC is present. BATTERY SPECIFICATIONS A replaceable battery (type BR2325) with a capacity of 165mAH is used: Estimated battery life when the card is left continuously. MF38M1-L6DAGXX Conditions Temperature : 25C Humidity : 60%RH 1.0years
MITSUBISHI ELECTRIC 11/11

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